Methodology
Opening for integration of functional electronic materials by low-temperature epitaxy
The CONCEPT project aims to develop low-temperature epitaxy of functional complex oxides by Atomic Layer Deposition (ALD) for the deposition of thin solid films with high uniformity and low density of structural defects, which will constitute significant steps forward in chemical deposition of functional materials and for the ferroelectric community at large. This technique is crucial for modern electronics and photonics, including the production of transistors with angstrom thickness precision across large areas. ALD operates at low temperatures, typically below 300°C, making it suitable for use in electronics production lines that require deposition on at least 6” (and preferably 8”) wafers.
How?
ALD processes have been previously developed for some of the target materials, but they require high-temperature post-deposition treatment, which is not feasible for ICT device production. The project focuses on developing novel epitaxial processes for pertinent materials: important ferroelectric complex oxides, and also candidates for the semiconducting electrode or channel.
Outcomes
CONCEPT brings together expertise in simulations, precursor chemistry, ALD process development, and ALD reactor engineering to achieve this goal.
